All-semiconductor photonic crystal surface emitting lasers at 980 nm through epitaxial regrowth

The purpose of this thesis is to outline the novel method of epitaxial regrowth for fabrication of photonic crystal surface emitting lasers (PCSELs). Waveguide modelling is conducted to demonstrate that strong coupling to the photonic crystal occurs, and that a decent mode overlap with the active region is simultaneously achieved in an optimised structure. Details of the regrowth process and the various fabrication techniques involved are discussed. Characterisation of devices indicates that emission from these all-semiconductor structures is comparable to void based PCSELs.