Study Of Silicon Carbide (SiC) Power Devices Using TCAD Simulation And Experimental Techniques

Neranchi Ralalage, Ashika ORCID: https://orcid.org/0000-0003-4513-9869 (2024) Study Of Silicon Carbide (SiC) Power Devices Using TCAD Simulation And Experimental Techniques. MSc by research thesis, University of York.

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Supervisors: Mumtaz, Asim and Lazarov, Vlado
Keywords: Silicon Carbide (SiC), Power Metal-Oxide-Semiconductor (MOS), Atomic Layer Deposition (ALD), Scanning Electron Microscopy (SEM), Capacitance-Voltage (C-V) measurement, Current-Voltage (I-V) measurement
Awarding institution: University of York
Academic Units: The University of York > School of Physics, Engineering and Technology (York)
Date Deposited: 24 Jan 2025 15:56
Last Modified: 24 Feb 2026 01:05
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