Next generation silicon MOS-gated bipolar power devices

LUO, PENG (2020) Next generation silicon MOS-gated bipolar power devices. PhD thesis, University of Sheffield.

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Supervisors: Madathil, Shankar
Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID: uk.bl.ethos.823919
Depositing User: Mr Peng Luo
Date Deposited: 18 Feb 2021 21:56
Last Modified: 25 Mar 2021 16:52
Open Archives Initiative ID (OAI ID):

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