HIGH EFFICIENCY BASE DRIVE DESIGNS FOR POWER CONVERTERS USING SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORS

This thesis explores the base driver designs for Silicon Carbide Bipolar Junction Transistors (SiC BJTs) and their applications for power converters. SiC is a wide bandgap semiconductor which has been the focus of recent researches as it has overcome the several of physical restrictions set by the silicon material. Compared with silicon bipolar devices, SiC BJTs have several advantages including a higher maximum junction temperature, higher current gain and lower switching power losses. Transient power losses are low and temperature-independent in a wide range of junction temperatures. With junction temperature capable of being between 25ºC to 240ºC, SiC BJTs have been of great interest in industry. As a current-driven device, the base driver power consumption is always a major concern. Therefore, high efficiency base drive designs for SiC BJT need to be investigated before this power device can be widely used in industry.