Characterization of high crystal quality (11-22) semi-polar GaN overgrown on m-plane sapphire for long wavelength emitters

XU, BENBO (2017) Characterization of high crystal quality (11-22) semi-polar GaN overgrown on m-plane sapphire for long wavelength emitters. PhD thesis, University of Sheffield.

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Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID (e.g. uk.bl.ethos.123456): uk.bl.ethos.714351
Depositing User: Mr BENBO XU
Date Deposited: 09 Jun 2017 12:57
Last Modified: 12 Oct 2018 09:40

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