Characterization of Growth of GaAs on Si/SiO2 via a Thin Layer of Perovskite

Taghi Khani, Arefeh (2015) Characterization of Growth of GaAs on Si/SiO2 via a Thin Layer of Perovskite. PhD thesis, University of Sheffield.

Abstract

Metadata

Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID (e.g. uk.bl.ethos.123456): uk.bl.ethos.677333
Depositing User: Miss Arefeh Taghi Khani
Date Deposited: 15 Jan 2016 16:46
Last Modified: 03 Oct 2016 13:06

Download

Arefeh_TaghiKhani_Sep2015

Share / Export

Statistics


You do not need to contact us to get a copy of this thesis. Please use the 'Download' link(s) above to get a copy.
You can contact us about this thesis. If you need to make a general enquiry, please see the Contact us page.