Characterization of Growth of GaAs on Si/SiO2 via a Thin Layer of Perovskite

Taghi Khani, Arefeh (2015) Characterization of Growth of GaAs on Si/SiO2 via a Thin Layer of Perovskite. PhD thesis, University of Sheffield.

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Supervisors: Walther, Thomas
Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID: uk.bl.ethos.677333
Depositing User: Miss Arefeh Taghi Khani
Date Deposited: 15 Jan 2016 16:46
Last Modified: 03 Oct 2016 13:06

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