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Novel Antiferromagnets for Spintronic Devices

Huminiuc, Teodor (2017) Novel Antiferromagnets for Spintronic Devices. PhD thesis, University of York.

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Abstract

Spin electronic or spintronic devices which are used in hard disk drive (HDD) read heads are expected to replace the current silicon based transistor technology used in volatile memories. A prime example for the net advantage of employing spin rather than electric charge manipulation is found in the newly developed magnetic random access memory (MRAM) which is proposed as a replacement for the dynamic random access memory (DRAM) based on three terminal metal-oxide-semiconductor (MOS) devices. Besides the decrease of energy consumption by a factor three arising from manipulating electron angular momentum, the magnetic memories are non-volatile hence they do not require constant power to store information. This allows for additional energy saving due to data stability when the storage device is powered off.

Item Type: Thesis (PhD)
Academic Units: The University of York > Physics (York)
Identification Number/EthosID: uk.bl.ethos.727386
Depositing User: Mr Teodor Huminiuc
Date Deposited: 28 Nov 2017 13:26
Last Modified: 24 Jul 2018 15:23
URI: http://etheses.whiterose.ac.uk/id/eprint/18864

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