Novel Power Electronic Device Structures for Power Conditioning Applications

The work presented in this thesis contains an investigation into the methods by which the semiconductor device performance can be improved with an aim to reduce the overall losses in the power conversion system. The types of devices discussed and evaluated in this thesis
include Silicon MOSFETs, IGBT, CIGBT and GaN HEMT devices. The performance improvement methods suggested in literature usually involve a trade-off of device characteristics with one another. Therefore an investigation into new device technologies and structures is deemed necessary such that the performance trade-off can be avoided or be improved.