MOCVD Growth and Characterisation of Semi-polar (11-22) GaN on Stripes Patterned Silicon Substrates for III-nitrides Based Optoelectronics

Zhao, Xuanming (2021) MOCVD Growth and Characterisation of Semi-polar (11-22) GaN on Stripes Patterned Silicon Substrates for III-nitrides Based Optoelectronics. PhD thesis, University of Sheffield.

Metadata

Supervisors: Wang, Tao
Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID: uk.bl.ethos.846589
Depositing User: Mr Xuanming Zhao
Date Deposited: 25 Jan 2022 09:18
Last Modified: 01 Mar 2023 10:53
Open Archives Initiative ID (OAI ID):

Download

Export

Statistics


You do not need to contact us to get a copy of this thesis. Please use the 'Download' link(s) above to get a copy.
You can contact us about this thesis. If you need to make a general enquiry, please see the Contact us page.