Zhang, Kunpeng (2020) The Growth of Large-Scale Single-Crystal Monolayer Transition Metal Disulfide Materials in High-Vacuum System Based on Passivated Semiconductor. PhD thesis, University of York.
Abstract
Two-dimensional transition metal disulfides (TMDs) possess fantastic physical properties. However, many as-prepared TMDs are limited in sample size, which highly
hinder their wide applications in high-performance electrical devices. We designed the growth mode by combining the passivation method and molecular beam epitaxial
(MBE) system, so as to obtain a full-coverage single-crystal monolayer transition metal disulfide material.
Metadata
Supervisors: | Yongbing, Xu and Iain, Will |
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Keywords: | Molecular beam epitaxial, 2D material |
Awarding institution: | University of York |
Academic Units: | The University of York > School of Physics, Engineering and Technology (York) |
Academic unit: | Electronic Engineering |
Depositing User: | Mr Kunpeng Zhang |
Date Deposited: | 05 Jul 2021 10:29 |
Last Modified: | 30 Jun 2024 00:05 |
Open Archives Initiative ID (OAI ID): | oai:etheses.whiterose.ac.uk:29133 |
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Description: PhD Thesis
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