Quantum well based group-IV SiGeSn semiconductor laser and optoelectronic devices

Chen, Zhichao ORCID: 0000-0001-8506-625X (2022) Quantum well based group-IV SiGeSn semiconductor laser and optoelectronic devices. PhD thesis, University of Leeds.

Abstract

Metadata

Related URLs:
Keywords: SiGeSn/GeSn, electroabsorption modulator, quantum well laser, k.p method, intra-step quantum well, tensile strain, gain optimization, inter-valence-band absorption, free carrier absorption.
Awarding institution: University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds)
Identification Number/EthosID (e.g. uk.bl.ethos.123456): uk.bl.ethos.858709
Depositing User: Mr. Zhichao Chen
Date Deposited: 28 Jun 2022 12:46
Last Modified: 11 Aug 2022 09:54

Download

Final eThesis - complete (pdf)

Share / Export

Statistics


You do not need to contact us to get a copy of this thesis. Please use the 'Download' link(s) above to get a copy.
You can contact us about this thesis. If you need to make a general enquiry, please see the Contact us page.