Novel GaN-based Vertical Field Effect Transistors for Power Switching

Qian, Hongtu (2017) Novel GaN-based Vertical Field Effect Transistors for Power Switching. PhD thesis, University of Sheffield.

Abstract

Metadata

Supervisors: Houston, P. A.
Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID: uk.bl.ethos.727313
Depositing User: Dr. Hongtu Qian
Date Deposited: 27 Nov 2017 09:05
Last Modified: 12 Oct 2018 09:47

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