Growth of GaAsBi pin diodes using MBE

Rockett, Thomas (2019) Growth of GaAsBi pin diodes using MBE. PhD thesis, University of Sheffield.

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Supervisors: David, John
Awarding institution: University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Electronic and Electrical Engineering (Sheffield)
Identification Number/EthosID: uk.bl.ethos.778806
Depositing User: University Thomas Rockett
Date Deposited: 10 Jun 2019 08:26
Last Modified: 01 May 2020 09:53

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Tom Rockett PhD Thesis

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Description: Tom Rockett PhD Thesis

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